Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers

Tuning of interface quality of Al/CeO₂/Si device by post-annealing of sol-gel grown high-k CeO₂ layers

A study was conducted on cerium oxide (CeO₂) thin films deposited on silicon substrates for use in metal-oxide-semiconductor (MOS) devices. The annealing temperature significantly influenced the film’s properties, including fixed charge density, dielectric constant, interface defect density, and minority carrier lifetime. The optimal annealing temperature was found to be 600°C, resulting in a high-quality interface and low defect density.